Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure

被引：4

作者：

Sitaputra, Wattaka ^{[1
]}

Tsu, Raphael ^{[1
,2
]}

机构：

[1] Univ N Carolina, Dept Phys & Opt Sci, Charlotte, NC 28223 USA

[2] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2013年 / 31卷 / 02期

关键词：

RARE-EARTH-OXIDES; OXYGEN VACANCIES; THIN-FILMS; SURFACES; GROWTH; METAL; GD2O3;

D O I：

10.1116/1.4793264

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Among the three major orientations, i.e., (100), (110), and (111), Gd2O3(100) is known from the energy point of view to be least favorable on Si(100), unless accompanied by an energy reduction mechanism with a subsequent transfer of electrons across the interface into the silicon substrate. Although the growth on p-type Si(100) results in the best structural consideration from XRD, sufficiently satisfactory stability is demonstrated with Gd2O3(100)/n-type Si(100) with a significantly higher mobility enhancement at high carrier concentration with features most desirable for CMOS applications. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4793264]

引用

页数：4

共 20 条

[1] MOCVD growth of (100)-oriented CeO2 thin films on hydrogen-terminated Ssi(100) substrates [J].

Ami, T ;

Suzuki, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 54 (1-2) :84-91

[2] Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation [J].

Ami, T ;

Ishida, Y ;

Nagasawa, N ;

Machida, A ;

Suzuki, M .

APPLIED PHYSICS LETTERS, 2001, 78 (10) :1361-1363

[3] Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations [J].

Badylevich, M. ;

Shamuilia, S. ;

Afanas'ev, V. V. ;

Stesmans, A. ;

Laha, A. ;

Osten, H. J. ;

Fissel, A. .

APPLIED PHYSICS LETTERS, 2007, 90 (25)

[4] COMPUTER MODELING OF SURFACES AND DEFECTS ON CERIUM DIOXIDE [J].

CONESA, JC .

SURFACE SCIENCE, 1995, 339 (03) :337-352

[5]

Delfrey K.N., 2008, RARE EARTHS RES APPL

[6] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J].

FATHAUER, RW ;

SCHOWALTER, LJ .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :519-521

[7] Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy [J].

Fissel, A. ;

Dargis, R. ;

Bugiel, E. ;

Schwendt, D. ;

Wietler, T. ;

Kruegener, J. ;

Laha, A. ;

Osten, H. J. .

THIN SOLID FILMS, 2010, 518 (09) :2546-2550

[8] Oxygen vacancies in transition metal and rare earth oxides: Current state of understanding and remaining challenges [J].

Ganduglia-Pirovano, M. Veronica ;

Hofmann, Alexander ;

Sauer, Joachim .

SURFACE SCIENCE REPORTS, 2007, 62 (06) :219-270

[9] 0.86-nm CET gate stacks with epitaxial Gd2O3 high-k dielectrics and FUSINiSi metal electrodes [J].

Gottlob, H. D. B. ;

Echtermeyer, T. ;

Schmidt, M. ;

Mollenhauer, T. ;

Efavi, J. K. ;

Wahlbrink, T. ;

Lemme, M. C. ;

Czernohorsky, M. ;

Bugiel, E. ;

Fissel, A. ;

Osten, H. J. ;

Kurz, H. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) :814-816

[10]

Jacek G., 2008, REP PROG PHYS, V71

← 1 2 →