Chemical vapour deposition of II-VI semiconductor thin films using M[(TePiPr2)2N]2 (M = Cd, Hg) as single-source precursors

被引：49

作者：

Garje, SS

Ritch, JS

Eisler, DJ

Afzaal, M

O'Brien, P

Chivers, T

机构：

[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England

[3] Univ Calgary, Dept Chem, Calgary, AB T2N 1N4, Canada

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2006年 / 16卷 / 10期

关键词：

D O I：

10.1039/b515362j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The aerosol-assisted chemical vapour deposition (AACVD) of CdTe has been carried out using Cd[(TePiPr(2))(2)N](2) at substrate temperatures between 375 and 475 degrees C. XRD shows the formation of cubic CdTe between 425 and 475 degrees C. At low deposition temperature (375 degrees C), a mixture of hexagonal tellurium and cubic cadmium telluride is observed. SEM images reveal that the growth temperatures do not have a profound effect on the morphologies of films. Surface analysis by XPS of films deposited at 475 degrees C showed the growth of Te-rich films. The AACVD of Hg[(TePiPr(2))(2)N](2) resulted in deposition of hexagonal tellurium.

引用

页码：966 / 969

页数：4

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