Analytical Solution of Circuits Employing Voltage- and Current-Excited Memristors

被引：19
作者：
Biolek, Zdenek [1 ]
Biolek, Dalibor [2 ,3 ]
Biolkova, Viera [4 ]
机构：
[1] Roznov PR, SSIER, Zlin 75661, Czech Republic
[2] Univ Def, Dept Elect Engn, Brno, Czech Republic
[3] Brno Univ Technol, Microelect Dept, Brno, Czech Republic
[4] Brno Univ Technol, Radioelect Dept, Brno, Czech Republic
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2012年 / 59卷 / 11期
关键词：
Constitutive relation; memductance; memristance; memristor; SPICE; MODEL;
D O I：
10.1109/TCSI.2012.2189058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The analysis of complicated circuits containing nonlinear electrical elements is commonly performed via numerical algorithms of simulation programs. However, an analytical solution can be preferable to the numerical approach, particularly for the needs of basic research. This paper introduces a methodology of the analytical solution of voltage/current response of the memristor to its excitation from ideal current/voltage source, with the memristor being characterized by the memristance-charge or memductance-flux relationships. The procedure is explained on examples of a TiO2 memristor with linear dopant drift and of a hydraulic memristor.
引用
收藏
页码：2619 / 2628
页数：10
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