Observations of conduction-band structure of 4H- and 6H-SiC -: art. no. 073104

被引：25

作者：

Shalish, I ^{[1
]}

Altfeder, IB ^{[1
]}

Narayanamurti, V ^{[1
]}

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.65.073104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2 8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.

引用

页码：1 / 4

页数：4

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