Observations of conduction-band structure of 4H- and 6H-SiC -: art. no. 073104

被引：25
|
作者：
Shalish, I [1 ]
Altfeder, IB [1 ]
Narayanamurti, V [1 ]
机构：
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.65.073104
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2 8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.
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页码：1 / 4
页数：4
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