Molecular Beam Epitaxy of Phosphorus-Doped ZnS

We have grown phosphorus-acceptor-doped ZnS by molecular beam epitaxy. Two sources of phosphorus (P), i.e., GaP and Zn3P2, were used and compared. The ZnS:P epitaxial layers grown using GaP exhibited acceptor-related emission in the low-temperature photoluminescence spectra while the layers grown using Zn3P2 did not show distinct acceptor-related emission. Secondary ion mass spectroscopy revealed, however, that the phosphorus concentration was much higher in the ZnS:P layers grown using Zn3P2. These different behaviors between the two P sources seem to originate from the difference in the molecular species.