Molecular Beam Epitaxy of Phosphorus-Doped ZnS

被引：3

作者：

Ichino, Kunio ^{[1
]}

Yoshida, Hiroshi ^{[1
]}

Kawai, Takashi ^{[1
]}

Matsumoto, Hiroyuki ^{[1
]}

Kobayashi, Hiroshi ^{[2
]}

机构：

[1] Tottori Univ, Dept Elect & Elect Engn, Tottori 680, Japan

[2] Tokushima Bunri Univ, Dept Nano Mat & Bio Engn, Tokushima, Japan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

ZnS; ZnS:P; Phosphorus; Acceptor; Photoluminescence; MBE;

D O I：

10.3938/jkps.53.2939

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have grown phosphorus-acceptor-doped ZnS by molecular beam epitaxy. Two sources of phosphorus (P), i.e., GaP and Zn3P2, were used and compared. The ZnS:P epitaxial layers grown using GaP exhibited acceptor-related emission in the low-temperature photoluminescence spectra while the layers grown using Zn3P2 did not show distinct acceptor-related emission. Secondary ion mass spectroscopy revealed, however, that the phosphorus concentration was much higher in the ZnS:P layers grown using Zn3P2. These different behaviors between the two P sources seem to originate from the difference in the molecular species.

引用

页码：2939 / 2942

页数：4

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