Properties of Cu(In,Ga)Se2:Fe thin films for solar cells

被引：0

作者：

Sakurai, K ^{[1
]}

Shibata, H ^{[1
]}

Nakamura, S ^{[1
]}

Yonemura, M ^{[1
]}

Kuwamori, S ^{[1
]}

Kimura, Y ^{[1
]}

Ishizuka, S ^{[1
]}

Yamada, A ^{[1
]}

Matsubara, K ^{[1
]}

Nakanishi, H ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] AIST, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

Thin-Film Compound Semiconductor Photovoltaics | 2005年 / 865卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated CIGS:Fe polycrystalline thin films using a standard three-stage method, and investigated the effects of Fe doping on cell performances. The Ga / (tn+Ga) ratio was varied between 0.3 similar to 1.0 (= CGS), and the Fe concentration was varied between 0.0 similar to 1.2 mol%. The films were characterized by various means, including the cell performance. Increment of the grain size with higher Fe content was observed. Redshift with higher Fe content was observed in the absorbance spectra. The spectral response of the fabricated solar cells deteriorated with higher Fe content, from the long wavelength side.

引用

页码：417 / 421

页数：5

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