Demonstration of the formation of porous silicon films with superior mechanical properties, morphology and stability

被引：14

作者：

Sharma, SN

Sharma, RK

Bhagavannarayana, G

Samanta, SB

Sood, KN

Lakshmikumar, ST

机构：

[1] Natl Phys Lab, Elect Mat Div, New Delhi 110012, India

[2] Natl Phys Lab, Mat Characterizat Div, New Delhi 110012, India

[3] Natl Phys Lab, Superconduct Dept, New Delhi 110012, India

来源：

MATERIALS LETTERS | 2006年 / 60卷 / 9-10期

关键词：

porous silicon; mechanical properties; morphology; current density; surfaces; porosity;

D O I：

10.1016/j.matlet.2005.10.101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly stable and mechanically strong thick porous silicon (PS) films have been obtained on textured silicon substrates. Porous silicon formed on textured substrates exhibits higher porosity, better mechanical strength, non-fractured surface morphology and lower stress compared to porous silicon formed on polished silicon substrates at the same current density, time of anodization and method of drying. The improved properties are attributed to the formation of localized highly porous macroscopic plastic regions. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：1166 / 1169

页数：4

共 15 条

[1] Strains and crystal lattice defects arising in macroporous silicon under oxidation [J].