Analytical Field Plate Model for Field Effect Transistors

被引：20

作者：

Coffie, Robert ^{[1
]}

机构：

[1] TriQuint, Richardson, TX 75081 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 03期

关键词：

Electric field effects; field effect transistors (FETs); high-voltage techniques; power semiconductor devices; semiconductor device breakdown; transistors; BREAKDOWN VOLTAGE;

D O I：

10.1109/TED.2014.2300115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simplified model for field plates applied to field effect transistors is developed with conformal mapping. From the model, universal design rules are generated for field plate length (L-FP) and field plate distance from the channel (a(1)) based on aspect ratio (LFP/a(1)) and pinchoff voltage of the field plate. These rules can then be used for finite element model refinement or experimental starting points for process design of experiments for field plate optimization.

引用

收藏

页码：878 / 883

页数：6

相关论文

共 16 条

[1] 10-W/mm AlGaN-GaNHFET with a field modulating plate [J].

Ando, Y ;

Okamoto, Y ;

Miyamoto, H ;

Nakayama, T ;

Inoue, T ;

Kuzuhara, M .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :289-291

[2] Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35V drain voltage [J].

Asano, K ;

Miyoshi, Y ;

Ishikura, K ;

Nashimoto, Y ;

Kuzuhara, M ;

Mizuta, M .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :59-62

[3] THE ROLE OF NONUNIFORM DIELECTRIC PERMITTIVITY IN THE DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY C-V PROFILING THROUGH ISOTYPE HETEROJUNCTIONS [J].

BABIC, DI ;

KROEMER, H .

SOLID-STATE ELECTRONICS, 1985, 28 (10) :1015-1017

[4]

Chini A., 2010, FIELD PLATE DEVICES

[5] SURFACE BREAKDOWN IN SILICON PLANAR DIODES EQUIPPED WITH FIELD PLATE [J].

CONTI, F ;

CONTI, M .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :93-+

[6] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J].

FRENSLEY, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :962-970

[7] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].

GROVE, AS ;

LEISTIKO, O ;

HOOPER, WW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) :157-+

[8] Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-Gate devices [J].

Jessen, Gregg H. ;

Fitch, Robert C., Jr. ;

Gillespie, James K. ;

Via, Glen ;

Crespo, Antonio ;

Langley, Derrick ;

Denninghoff, Daniel J. ;

Trejo, Manuel, Jr. ;

Heller, Eric R. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2589-2597

[9] Field-plate engineering for HFETs [J].

Karmalkar, S ;

Shur, MS ;

Simin, G ;

Khan, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) :2534-2540

[10] Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate [J].

Karmalkar, S ;

Mishra, UK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) :1515-1521