Hamming network circuits based on CMOS/memristor hybrid design

被引：10

作者：

Zhu, Xuan ^{[1
,2
]}

Yang, Xuejun ^{[1
,2
]}

Wu, Chunqing ^{[2
]}

Wu, Junjie ^{[1
,2
]}

Yi, Xun ^{[1
,2
]}

机构：

[1] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha, Hunan, Peoples R China

[2] Natl Univ Def Technol, Sch Comp, Changsha, Hunan, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 12期

关键词：

hamming network; memristor; nanocrossbar; neural networks; MEMRISTOR DEVICE;

D O I：

10.1587/elex.10.20130404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Memristor, as an innovative technology, has been proposed in the application of neural networks since its physical implementation was reported by HP lab. In this paper, we proposed a Hamming network circuits based on CMOS/memristor hybrid design which is compact in device size and circuit structure. Through HSPICE simulation, pattern recognition and classification functions of hamming network circuits are demonstrated using a 16 x 16 nanocrossbar memory.

引用

页数：9

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