Computer simulation study of the MOCVD growth of titanium dioxide films

被引：12
作者：
Nami, Z
Misman, O
Erbil, A
May, GS
机构：
[1] GEORGIA INST TECHNOL, SCH ELECT & COMP ENGN, ATLANTA, GA 30332 USA
[2] GEORGIA INST TECHNOL, SCH PHYS, ATLANTA, GA 30332 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 171卷 / 1-2期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1016/S0022-0248(96)00499-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The fluid dynamics of an inverted metalorganic chemical vapor deposition (MOCVD) reactor for the growth of TiO2 films are studied. The coupled transport equations are solved by numerical integration using a control-volume-based finite difference method. The model predicts gas velocity, temperature distribution, concentration of reactant gas, and deposition rate. The effects of radiation heat transfer, external heat transfer for the reactor walls, thermal diffusion, susceptor surface temperature distribution, and reaction rate order are considered. Simulation results are verified by experiment.
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页码：154 / 165
页数：12
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