Thin-film transistors based on well-ordered thermally evaporated naphthacene films

被引:200
作者
Gundlach, DJ [1 ]
Nichols, JA [1 ]
Zhou, L [1 ]
Jackson, TN [1 ]
机构
[1] Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16801 USA
关键词
D O I
10.1063/1.1471378
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm(2)/V s, current on/off ratio greater than 10(6), negative threshold voltage, and subthreshold slope of 1 V/decade. (C) 2002 American Institute of Physics.
引用
收藏
页码:2925 / 2927
页数:3
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