Transport Phenomena and Conduction Mechanism of Individual Cross-Junction SnO2 Nanobelts

被引：6

作者：

Guo, Zheng ^{[1
]}

Chen, Xing ^{[1
]}

Liu, Jin-Huai ^{[1
]}

Huang, Xing-Jiu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Intelligent Machines, Res Ctr Biomimet Funct Mat & Sensing Devices, Hefei 230031, Peoples R China

来源：

SMALL | 2013年 / 9卷 / 16期

基金：

中国国家自然科学基金;

关键词：

electron transport; nanomanipulation; nanostructures; tin oxide; SnO2; nanobelts; WALLED CARBON NANOTUBES; OXIDE NANOBELTS; NANOWIRES; CIRCUITS; DEVICES; SENSORS; LOGIC; SENSITIVITY; NANOSYSTEMS; INTEGRATION;

D O I：

10.1002/smll.201200672

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrical characteristics of individual cross-junction nanodevices consisting of two SnO2 nanobelts are systematically investigated. The source-drain current along one nanobelt under constant source-drain voltage is not linearly varied with the 'gate' voltage applied on the terminal of the other one. The absolute increments for the source-drain and 'gate' current gradually increase as the gate voltage deviates from 0 V. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2678 / 2683

页数：6

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