Enhanced optoelectronic properties of Mg doped Cu2O thin films prepared by nebulizer pyrolysis technique

In the present work, pure and magnesium doped Cu2O films were deposited on glass substrates by nebulizer spray pyrolysis method with doping concentrations of 0, 3, 5 and 7% at 280 degrees C. The as-prepared films were analyzed by XRD, AFM, laser Raman, UV-Vis, photoluminescence, Hall Effect measurements. An X-ray diffraction study clearly depicts that films are possessing polycrystalline nature with a cubic structure. The surface topological properties have been characterized using atomic force microscopy (AFM) which reveals nano shaped hill rock grains covered the surface of the substrate. Laser Raman spectroscopy studies confirm the peaks observed at 109, 148, 217, 416 and 514cm(-1) belong to Cu2O phase. UV-Vis spectrophotometer measurements show that the band gap is decreased from 2.25 to 1.9eV for the increase of doping concentration Mg. Photoluminescence spectral analysis giving an emission peak at 630nm confirmed the formation of cuprous oxide. The electrical studies showed that the films are of p-type. For the doping of 7% Mg concentration the Cu2O showed a resistivity 1.53x10(2) andhigh carrier concentration of 21.67x10(16)cm(-3). FTO/ZnO/Cu2O/Ag heterojunction was fabricated using 7% Mg doped Cu2O thin film, and found the open circuit voltage (V-oc) as 0.25V, short circuit current (I-sc) as 0.225x10(-4)A and the efficiency as 0.65% for the 7% Mg doped Cu2O thin film.