Electrical Characteristics and Microstructures of Dy-doped Bi4Ti3O12 Ceramics

被引：1
作者：
Mei, X. A. [1 ]
Chen, M. [1 ]
Liu, R. F. [1 ]
Sun, Y. H. [1 ]
Liu, J. [1 ]
机构：
[1] Hunan Inst Sci & Technol, Sch Phys, Yueyang 414000, Peoples R China
来源：
CHINESE CERAMICS COMMUNICATIONS II | 2012年 / 412卷
关键词：
Microstructure; Impedance; Electrical Properties; Bismuth Titanate; CURRENT VOLTAGE CHARACTERISTICS; ELECTROFORMED MIM STRUCTURES; THIN-FILMS; BISMUTH TITANATE; FERROELECTRIC PROPERTIES; SOLUTION DEPOSITION; FILAMENTARY RADII; MEMORIES;
D O I：
10.4028/www.scientific.net/AMR.412.322
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of Dy-bismuth titanate (Bi4-xDyxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Dy-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Dy-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Dy-doped sample exhibit randomly oriented and plate-like morphology.
引用
收藏
页码：322 / 325
页数：4
相关论文
共 50 条
  • [41] Effect of vanadium doping on property of Bi4Ti3O12 fabrication and ceramics
    Tang, QY
    Kan, YM
    Li, YG
    Zhang, GJ
    Wang, PL
    SCRIPTA MATERIALIA, 2006, 54 (12) : 2075 - 2080
  • [42] Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics
    Huang, C. Q.
    Liu, J.
    Chen, M.
    Mei, X. A.
    TESTING AND EVALUATION OF INORGANIC MATERIALS IV, 2014, 591 : 212 - 215
  • [43] Domain structure of Bi4Ti3O12 ceramics revealed by chemical etching
    Jardiel, Teresa
    Caballero, Arnador C.
    Fernandez, Jose F.
    Villegas, Marina
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (13) : 2823 - 2826
  • [44] Electret state in Bi4Ti3O12 ceramics
    Jovalekic, C.
    Zdujic, M.
    CERAMICS INTERNATIONAL, 2010, 36 (02) : 789 - 792
  • [45] Ferroelectric Properties and Microstructures of Tb4O7-doped Bi4Ti3O12 Thin Films
    Liu, R. F.
    Mei, X. A.
    Chen, M.
    Huang, C. Q.
    Liu, J.
    HIGH-PERFORMANCE CERAMICS VII, PTS 1 AND 2, 2012, 512-515 : 1325 - 1328
  • [46] Influence of Primary Milling on Structural and Electrical Properties of Bi4Ti3O12 Ceramics Obtained by Sintering Process
    Dercz, J.
    Dercz, G.
    Prusik, K.
    Solecka, B.
    Starczewska, A.
    Ilczuk, J.
    INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2010, 31 (01) : 42 - 54
  • [47] Strong green light emission in Ho doped Bi4Ti3O12 ferroelectric ceramics
    Wei, T.
    Zhou, Q. J.
    Zhao, C. Z.
    Lin, Y. B.
    Zou, Y. L.
    Li, Y.
    Zhang, L. S.
    CERAMICS INTERNATIONAL, 2013, 39 (06) : 7211 - 7215
  • [48] Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films
    Mei, X. A.
    Chen, M.
    Cai, A. H.
    Su, K. L.
    Huang, C. Q.
    Wan, Z. M.
    CHINESE CERAMICS COMMUNICATIONS, 2010, 105-106 : 259 - 262
  • [49] Correlation between lattice distortion and electrical properties on Bi4Ti3O12 ceramics with W/Ni modifications
    Peng, Zhihang
    Chen, Yu
    Chen, Qiang
    Li, Na
    Zhao, Xiaohan
    Kou, Chuang
    Xiao, Dingquan
    Zhu, Jianguo
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 590 : 210 - 214
  • [50] Microstructure and electrical properties in W/Nb co-doped Aurivillius phase Bi4Ti3O12 piezoelectric ceramics
    Peng, Zhihang
    Chen, Qiang
    Chen, Yu
    Xiao, Dingquan
    Zhu, Jianguo
    MATERIALS RESEARCH BULLETIN, 2014, 59 : 125 - 130
12345