Electrical Characteristics and Microstructures of Dy-doped Bi4Ti3O12 Ceramics

被引：1

作者：

Mei, X. A. ^{[1
]}

Chen, M. ^{[1
]}

Liu, R. F. ^{[1
]}

Sun, Y. H. ^{[1
]}

Liu, J. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Sch Phys, Yueyang 414000, Peoples R China

来源：

CHINESE CERAMICS COMMUNICATIONS II | 2012年 / 412卷

关键词：

Microstructure; Impedance; Electrical Properties; Bismuth Titanate; CURRENT VOLTAGE CHARACTERISTICS; ELECTROFORMED MIM STRUCTURES; THIN-FILMS; BISMUTH TITANATE; FERROELECTRIC PROPERTIES; SOLUTION DEPOSITION; FILAMENTARY RADII; MEMORIES;

D O I：

10.4028/www.scientific.net/AMR.412.322

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of Dy-bismuth titanate (Bi4-xDyxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Dy-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Dy-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Dy-doped sample exhibit randomly oriented and plate-like morphology.

引用

页码：322 / 325

页数：4

共 20 条

[1] Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications [J].

Alexe, M ;

Scott, JF ;

Curran, C ;

Zakharov, ND ;

Hesse, D ;

Pignolet, A .

APPLIED PHYSICS LETTERS, 1998, 73 (11) :1592-1594

[2]

Bling R., 1981, SOFT MODES FERROELEC, P288

[3] ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS [J].

CUMMINS, SE ;

CROSS, LE .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2268-&

[4]

Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9

[5] Semiconductor nanoparticles for quantum devices [J].

Erokhin, V ;

Carrara, S ;

Amenitch, H ;

Bernstorff, S ;

Nicolini, C .

NANOTECHNOLOGY, 1998, 9 (03) :158-161

[6]

Fritzsche H., 1974, AMORPHOUS LIQUID SEM, P313

[7] ELECTROFORMED MIM STRUCTURES - DEPENDENCE OF THE CURRENT VOLTAGE CHARACTERISTICS ON THE STANDARD-DEVIATION OF A NORMAL-DISTRIBUTION OF FILAMENTARY RADII [J].

GRAVANO, S ;

GOULD, RD .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1992, 73 (02) :315-320

[8] CALCULATIONS OF THE CURRENT VOLTAGE CHARACTERISTICS OF ELECTROFORMED MIM STRUCTURES, ASSUMING A NORMAL-DISTRIBUTION OF FILAMENTARY RADII [J].

GRAVANO, S ;

GOULD, RD .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1992, 73 (05) :837-839

[9] Ferroelectric properties of bismuth titanate niobate Bi7Ti4NbO21 thin film [J].

Kim, CJ ;

Hong, SG .

THIN SOLID FILMS, 2000, 365 (01) :58-60

[10] Correlation between internal stress and ferroelectric fatigue in Bi4-xLaxTi3O12 thin films [J].

Lee, JK ;

Kim, CH ;

Suh, HS ;

Hong, KS .

APPLIED PHYSICS LETTERS, 2002, 80 (19) :3593-3595

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