Fast plasma sintering deposition of nano-structured silicon carbide coatings

被引:0
作者
Huang, Heji [1 ]
Fu, Zhiqiang [1 ]
Pan, Wenxia [1 ]
Wu, Chengkang [1 ]
机构
[1] Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China
来源
18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷
关键词
reduced-pressure; plasma sintering deposition; silicon carbide coating; ultrafast deposition; OXIDATION PROTECTION; COMPOSITES; PRESSURE; CARBON;
D O I
10.1016/j.phpro.2012.03.606
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fast plasma sintering deposition of SiC nano-structured coatings was achieved using a specially designed non-transferred dc plasma torch operated at reduced pressure. Employing the Taguchi method, the deposition parameters were optimized and verified. With the optimized combination of deposition parameters, homogeneous SiC coatings were deposited on relatively large area substrates of Phi 50 mm and 50 x 50 mm with a deposition rate as high as 20 mu m/min. Ablation test showed that such coatings can be used as oxidation resistance coatings in high temperature oxidizing environment. (C) 2012 Published by Elsevier B.V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).
引用
收藏
页码:598 / 604
页数:7
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