Band Alignment at the Al2O3/β-Ga2O3Interface with CHF3Treatment*

The energy band alignment at the atomic layer deposited Al2O3/beta-Ga(2)O(3)interface with CHF(3)treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS). With additional CHF(3)plasma treatment, the conduction band offset increases from 1.95 +/- 0.1 eV to 2.32 +/- 0.1 eV; and the valence band offset decreases from 0.21 +/- 0.1 eV to -0.16 +/- 0.1 eV. As a result, the energy band alignment changes from type I to type II. This energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d, resulting from the Ga-F bond formation in the F-rich interfacial layer, which is confirmed by the SIMS results.