de Haas-van Alphen Effect and Fermi Surface Properties in Single-Crystalline ThCu2Si2

被引：2

作者：

Nakamura, Ai ^{[1
]}

Honda, Fuminori ^{[1
]}

Homma, Yoshiya ^{[1
]}

Li, Dexin ^{[1
]}

Shimizu, Yusei ^{[1
]}

Maurya, Arvind ^{[1
]}

Sato, Yoshiki J. ^{[2
]}

Harima, Hisatomo ^{[3
]}

Onuki, Yoshichika ^{[4
]}

Aoki, Dai ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Oarai, Ibaraki 3111313, Japan

[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808577, Japan

[3] Kobe Univ, Grad Sch Sci, Kobe, Hyogo 6578501, Japan

[4] Univ Ryukyus, Fac Sci, Nishihara, Okinawa 9030213, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2020年 / 89卷 / 09期

关键词：

CRITICAL PRESSURE; HEAVY-FERMION;

D O I：

10.7566/JPSJ.89.094703

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We succeeded in growing high-quality single crystals of ThCu2Si2 with the ThCr2Si2-type tetragonal structure by the Sn-flux method and measured the electrical resistivity, specific heat, and de Haas-van Alphen (dHvA) effect to study the Fermi surface properties. Comparing this experiment results with those of the full-potential LAPW band calculation, we found that the detected main dHvA branches named alpha, alpha', gamma(1), and gamma(2) correspond to two-hole Fermi surfaces, while branches beta and beta' correspond to an electron Fermi surface centered at the Gamma point in the Brillouin zone. The detected dHvA branches are well explained by the results of the band calculations. The detected cyclotron effective masses are in the range from 0.25 to 1.02m(0), where m(0) is the rest mass of an electron. The obtained Fermi surfaces of ThCu2Si2 are compared with those of the heavy-fermion superconductor CeCu2Si2 from the viewpoint of the Fermi surface properties.

引用

页数：6

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