Effects of hydrogen on Al/Si(111)-H Schottky interfaces

被引：6

作者：

Hirose, K

Saitoh, T

Hanta, A

Uda, M

机构：

[1] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

[2] Waseda Univ, Dept Mat Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[3] Waseda Univ, Mat Sci & Technol Lab, Shinjuku Ku, Tokyo 1620051, Japan

来源：

SURFACE SCIENCE | 1999年 / 433卷

关键词：

Al; H; photoemission spectroscopy; Schottky interface; Si; thin film growth;

D O I：

10.1016/S0039-6028(99)00032-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al/Si(111)-H Schottky interfaces are studied by X-ray photoelectron spectroscopy and atomic force microscopy. It is shown that all hydrogen atoms that terminated the original clean Si(111) surface still exist at the buried Al/Si(111)-H interface. It is also shown that the existence of hydrogen at the Al/Si(111)-H Schottky interface suppresses agglomeration of the Al film at 923 K. (C) 1999 Elsevier Science B.V, All rights reserved.

引用

页码：581 / 584

页数：4

共 16 条

[1] CORE-LEVEL SHIFTS OF SILICON-HYDROGEN SPECIES ON CHEMICALLY TREATED SI SURFACES STUDIED BY HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY [J].