In-depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle-resolved X-ray photoelectron spectroscopy

被引：3

作者：

Bourlier, Yoan ^{[1
]}

Bouttemy, Muriel ^{[1
]}

Fregnaux, Mathieu ^{[1
]}

Patard, Olivier ^{[2
]}

Gamarra, Piero ^{[2
]}

Piotrowicz, Stephane ^{[2
]}

Delage, Sylvain ^{[2
]}

Etcheberry, Arnaud ^{[1
]}

机构：

[1] Univ Paris Saclay, Univ Versailles St Quentin Yvelines, CNRS, Inst Lavoisier Versailles ILV, 45 Ave Etats Unis, F-78035 Versailles, France

[2] III V Lab, Microelect GaN, Campus Polytech, Palaiseau, France

来源：

SURFACE AND INTERFACE ANALYSIS | 2020年 / 52卷 / 12期

关键词：

MEAN FREE PATHS; LAYERS; SURFACES; XPS;

D O I：

10.1002/sia.6857

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

During high-electron-mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heterostructures, annealed at 850 degrees C under O(2)partial pressure, present a specific in-depth organization. Angle-resolved X-ray photoelectron spectroscopy is a powerful tool to precisely determine the spatial localization and relative position of the different interfaces, from InAlN until buried GaN layer. The proposed in-depth model of the stack evidences (1) an Al-rich surface oxide with embedded N(2)molecules, (2) an interlayer of InAlN(<1)governed by nitrogen lattice defects, (3) a stable In0.2Al0.8N matrix, and finally (4) the GaN buffer layer underneath.

引用

收藏

页码：914 / 918

页数：5

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