Current through a combined magnetostatic and electrostatic barrier system

被引：12
|
作者：
Heide, C [1 ]
机构：
[1] Univ Oxford, Dept Phys, Oxford OX1 3NP, England
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.60.2571
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A device is proposed where a gated ferromagnetic strip is placed on top of a semiconductor heterostructure to form a combined magnetostatic and electrostatic barrier. On the basis of a simple model which is of the Landauer-Buttiker type, the current-voltage characteristics are studied, and it is shown that the electron motion can be tuned between three different regimes: quasiclassical behavior, usual barrier tunneling, and resonant tunneling. [S0163-1829(99)01728-2].
引用
收藏
页码：2571 / 2578
页数：8
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