Current through a combined magnetostatic and electrostatic barrier system

被引：12

作者：

Heide, C ^{[1
]}

机构：

[1] Univ Oxford, Dept Phys, Oxford OX1 3NP, England

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.60.2571

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A device is proposed where a gated ferromagnetic strip is placed on top of a semiconductor heterostructure to form a combined magnetostatic and electrostatic barrier. On the basis of a simple model which is of the Landauer-Buttiker type, the current-voltage characteristics are studied, and it is shown that the electron motion can be tuned between three different regimes: quasiclassical behavior, usual barrier tunneling, and resonant tunneling. [S0163-1829(99)01728-2].

引用

页码：2571 / 2578

页数：8

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