Near-field radiative heat transfer between doped-Si parallel plates separated by a spacing down to 200 nm

被引:113
作者
Watjen, Jesse I. [1 ]
Zhao, Bo [1 ]
Zhang, Zhuomin M. [1 ]
机构
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
SILICON;
D O I
10.1063/1.4967384
中图分类号
O59 [应用物理学];
学科分类号
摘要
Heat transfer between two objects separated by a nanoscale vacuum gap holds great promise especially in energy harvesting applications such as near-field thermophotovoltaic systems. However, experimental validation of nanoscale radiative heat transfer has been largely limited to tip-plate configurations due to challenges of maintaining small gap spacing over a relatively large area. Here, we report measurements of heat transfer near room temperature between two 1 cm by 1 cm doped-Si parallel plates, separated by a vacuum gap from about 200 nm to 780 nm. The measured strong near-field radiative transfer is in quantitative agreement with the theoretical prediction based on fluctuational electrodynamics. The largest measured radiative heat flux is 11 times as high as the blackbody limit for the same hot and cold surface temperatures. Our experiments have produced the highest radiative heat transfer rate observed to date across submicron distances between objects near room temperature. Published by AIP Publishing.
引用
收藏
页数:5
相关论文
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