Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission

被引：7

作者：

Shinkawa, Ayaka ^{[1
,4
]}

Wakiya, Minoru ^{[1
,5
]}

Maeda, Yuki ^{[1
,6
]}

Tsukamoto, Takahiro ^{[2
]}

Hirose, Nobumitsu ^{[3
]}

Kasamatsu, Akifumi ^{[3
]}

Matsui, Toshiaki ^{[3
]}

Suda, Yoshiyuki ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Grad Sch Engn, Koganei, Tokyo 1848588, Japan

[2] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

[3] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[4] Fuji Xerox Co Ltd, Tokyo 1070052, Japan

[5] Kandenko Co Ltd, Tokyo 1088533, Japan

[6] JXTG Nippon Oil & Energy Corp, Tokyo 1008162, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 08期

关键词：

SiGe; Si hole-tunneling resonant tunneling diode; high resonance current; suppressed thermionic emission; HETEROSTRUCTURES; TEMPERATURE; PERFORMANCE; SI1-XGEX; LAYERS;

D O I：

10.35848/1347-4065/aba379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diodes, designed so that the energy difference between the barrier height of the collector side and the coresonance tunneling energy at the coresonance voltage became larger on the basis of the simulation results of voltage-dependent quantized-level shifts and fabricated with the growth of highly B-doped emitter and collector layers without post-annealing, exhibited a flatter surface and a higher performance with a peak current density of 73 kA cm(-2)and suppressed thermionic emission with a peak-to-valley current ratio of 14.

引用

页数：4

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