Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures

被引：13

作者：

Kuk, Seung-Hee ^{[1
]}

Lee, Soo-Yeon ^{[1
]}

Kim, Sun-Jae ^{[1
]}

Kim, Binn ^{[1
,2
]}

Park, Soo-Jeong ^{[2
]}

Kwon, Jang-Yeon ^{[3
]}

Han, Min-Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

[2] LG Display, Ctr Res & Dev, Paju 413811, South Korea

[3] Yonsei Univ, Sch Integrated Technol, Inchon 406840, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs); hysteresis; light response;

D O I：

10.1109/LED.2012.2205891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature. Light-induced hysteresis occurs due to increased subband-gap states at the interface between the gate-insulator layer and the active layer. Increased subband-gap states increase the subthreshold slope (SS) during the forward sweep. As temperature increases, the transition rate from neutral oxygen vacancy V-O to doubly ionized oxygen vacancy V-O(2+) increases under the same illumination conditions. The SS of the forward sweep increases with temperature due to the increase in V-O(2+) states.

引用

页码：1279 / 1281

页数：3

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