Monolithically Integrated DFB-EA for 100 Gb/s Ethernet

被引:19
作者
Chacinski, Marek [1 ]
Westergren, Urban [1 ]
Stoltz, Bjoern [2 ]
Thylen, Lars [1 ,3 ]
机构
[1] Royal Inst Technol, Kista Photon Res Ctr, S-16440 Kista, Sweden
[2] Syntune, S-16440 Kista, Sweden
[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA
关键词
High-speed modulator; integrated optoelectronics; semiconductor lasers; waveguide modulator;
D O I
10.1109/LED.2008.2007222
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected >= 100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mu m resulting in similar to 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.
引用
收藏
页码:1312 / 1314
页数:3
相关论文
共 5 条
  • [1] CHACINSKI M, 2008, P OFC SAN DIEG CA, P1
  • [2] Electroabsorpotion modulators suitable for 100-Gb/s Ethernet
    Chacinski, Marek
    Westergren, Urban
    Willen, Bo
    Stoltz, Bjoern
    Thylen, Lars
    [J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) : 1014 - 1016
  • [3] JANY C, 2007, P 33 ECOC BERL GERM
  • [4] Segmented transmission-line electroabsorption modulators
    Lewén, R
    Irmscher, S
    Westergren, U
    Thylén, L
    Eriksson, U
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2004, 22 (01) : 172 - 179
  • [5] YU Y, 2005, P OFC AN CA