Top-gate organic field-effect transistors fabricated on paper with high operational stability

被引：31

作者：

Wang, Cheng-Yin ^{[1
]}

Fuentes-Hernandez, Canek ^{[1
]}

Chou, Wen-Fang ^{[1
]}

Kippelen, Bernard ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA

来源：

ORGANIC ELECTRONICS | 2017年 / 41卷

关键词：

Organic field-effect transistors; Top-gate geometry; Paper; Operational stability; Flexibility; POLY(VINYL ALCOHOL); ELECTRONICS; BLENDS;

D O I：

10.1016/j.orgel.2016.11.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on top-gate organic field-effect transistors (OFETs) fabricated on specialty paper, PowerCoat (TM) HD 230 from Arjowiggins Creative Papers coated with a buffer layer composed of a polyvinyl alcohol (PVA) and polyvinylpyrrolidine (PVP) blend. OFETs operate at low voltages and display average carrier mobility values of 1.7 +/- 1.1 x 10 x 1 cm(2)/Vs, average threshold voltage values of - 1.4 +/- 0.2 V, and average on/off current ratio of 10(5). OFETs also display excellent operational stability demonstrated by stable 1000 scans of the transfer characteristics and by stable on-currents displaying less than 6% change during a DC bias stress test at VDS = VGS = - 10 V for 1 h. Furthermore, OFETs on paper display a decrease of only 7% in their on-state current during a bending test. The performance of these OFETs on paper is comparable to that displayed by top-gate OFETs with the same geometry fabricated on glass substrates. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：340 / 344

页数：5

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