Top-gate organic field-effect transistors fabricated on paper with high operational stability

被引:31
作者
Wang, Cheng-Yin [1 ]
Fuentes-Hernandez, Canek [1 ]
Chou, Wen-Fang [1 ]
Kippelen, Bernard [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
关键词
Organic field-effect transistors; Top-gate geometry; Paper; Operational stability; Flexibility; POLY(VINYL ALCOHOL); ELECTRONICS; BLENDS;
D O I
10.1016/j.orgel.2016.11.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on top-gate organic field-effect transistors (OFETs) fabricated on specialty paper, PowerCoat (TM) HD 230 from Arjowiggins Creative Papers coated with a buffer layer composed of a polyvinyl alcohol (PVA) and polyvinylpyrrolidine (PVP) blend. OFETs operate at low voltages and display average carrier mobility values of 1.7 +/- 1.1 x 10 x 1 cm(2)/Vs, average threshold voltage values of - 1.4 +/- 0.2 V, and average on/off current ratio of 10(5). OFETs also display excellent operational stability demonstrated by stable 1000 scans of the transfer characteristics and by stable on-currents displaying less than 6% change during a DC bias stress test at VDS = VGS = - 10 V for 1 h. Furthermore, OFETs on paper display a decrease of only 7% in their on-state current during a bending test. The performance of these OFETs on paper is comparable to that displayed by top-gate OFETs with the same geometry fabricated on glass substrates. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:340 / 344
页数:5
相关论文
共 50 条
  • [1] Operational Stability of Organic Field-Effect Transistors
    Bobbert, Peter A.
    Sharma, Abhinav
    Mathijssen, Simon G. J.
    Kemerink, Martijn
    de Leeuw, Dago M.
    ADVANCED MATERIALS, 2012, 24 (09) : 1146 - 1158
  • [2] Systematic Reliability Study of Top-Gate p- and n-Channel Organic Field-Effect Transistors
    Hwang, Do Kyung
    Fuentes-Hernandez, Canek
    Fenoll, Mathieu
    Yun, Minseong
    Park, Jihoon
    Shim, Jae Won
    Knauer, Keith A.
    Dindar, Arnir
    Kim, Hyunichul
    Kim, Yongjin
    Kim, Jungbae
    Cheun, Hyeunseok
    Payne, Marcia M.
    Graham, Samuel
    Im, Seongil
    Anthony, John E.
    Kippelen, Bernard
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (05) : 3378 - 3386
  • [3] Pentacene-based organic field-effect transistors with poly(methyl methacrylate) top-gate insulators fabricated by electrostatic spray deposition
    Onojima, Norio
    Takahashi, Shun
    Kato, Takamasa
    SYNTHETIC METALS, 2013, 177 : 72 - 76
  • [4] Device Performance of Benzothienobenzothiophene-Based Top-Gate Organic Field-Effect Transistors with Embedded Electrodes
    Kimura, Yu
    Mochizuki, Fumio
    Nagase, Takashi
    Kobayashi, Takashi
    Takimiya, Kazuo
    Ikeda, Masaaki
    Naito, Hiroyoshi
    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2, 2012, 19 : 901 - 904
  • [5] Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition
    Onojima, Norio
    Takahashi, Shun
    Saito, Hiroki
    ORGANIC ELECTRONICS, 2015, 24 : 165 - 169
  • [6] Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates
    Wang, Cheng-Yin
    Fuentes-Hernandez, Canek
    Liu, Jen-Chieh
    Dindar, Amir
    Choi, Sangmoo
    Youngblood, Jeffrey P.
    Moon, Robert J.
    Kippelen, Bernard
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (08) : 4804 - 4808
  • [7] Effect of Hole-Injection Layer on Top-Gate Organic Field-Effect Transistors Based on Soluble Benzothienobenzothiophene Derivatives
    Mochizuki, Fumio
    Miyata, Yosuke
    Nagase, Takashi
    Kobayashi, Takashi
    Takimiya, Kazuo
    Ikeda, Masaaki
    Naito, Hiroyoshi
    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2, 2012, 19 : 1129 - 1132
  • [8] Solvent-Free Processable and Photo-Patternable Hybrid Gate Dielectric for Flexible Top-Gate Organic Field-Effect Transistors
    Kwon, Jun Seon
    Park, Han Wool
    Kim, Do Hwan
    Kwark, Young-Je
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (06) : 5366 - 5374
  • [9] Diels-Alder Crosslinked Block-Copolymer Gate Dielectrics for Low Voltage Operated Top-Gate Organic Field-Effect Transistors
    Kang, Seok-Ju
    Baeg, Kang-Jun
    Choi, Won-San
    Noh, Yong-Young
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2014, 598 (01) : 69 - 77
  • [10] High performance top-gate field-effect transistors based on poly(3-alkylthiophenes) with different alkyl chain lengths
    Takagi, Kenichiro
    Nagase, Takashi
    Kobayashi, Takashi
    Naito, Hiroyoshi
    ORGANIC ELECTRONICS, 2014, 15 (02) : 372 - 377