Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

被引:25
作者
Kim, B. J. [1 ]
Jung, H. [1 ]
Shin, J. [2 ]
Mastro, M. A. [3 ]
Eddy, C. R., Jr. [3 ]
Hite, J. K. [3 ]
Kim, S. H. [1 ]
Bang, J. [1 ]
Kim, J. [1 ]
机构
[1] Korea Univ, Dept Biol & Chem Engn, Seoul 136701, South Korea
[2] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA
[3] USN, Res Lab, Washington, DC 20375 USA
关键词
Light emitting diode; Light extraction efficiency; Nanosphere arrays; GAN; GROWTH;
D O I
10.1016/j.tsf.2008.11.067
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here we introduce a simple and robust method to improve the light extraction efficiency of ultraviolet light emitting diodes (UV LEDs). Although many previous efforts have focused on etching the GaN surfaces, we employed a simple solution process to texture the GaN surface. Arrays of SiO2 nanosphere monolayers were spun cast onto a polymer layer. consisting of benzocyclobutene (BCB) resins: subsequently, the bottom half of the SiO2 nanospheres sunk into the BCB layer. The resulting array formed in a hexagonal-like pattern of 'nano-lenses' and the photoluminescence measurement exhibited that these patterns enhanced the light extracting efficiency of UV LEDs by 23%. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2742 / 2744
页数:3
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