Secondary electron emission performance of the surface Ni-doped MgO-Au thin film under continuous electron bombardment

被引:6
作者
Liu, Biye [1 ,2 ]
Li, Jie [1 ]
Wu, Shengli [1 ]
Hu, Wenbo [1 ]
Zhang, Mingxin [1 ]
Wei, Kongting [1 ]
Zhang, Jintao [1 ]
Fan, Huiqing [3 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, 28 Xianning West Rd, Xian 710049, Peoples R China
[2] Beijing Orient Inst Measurement & Test, 82 Zhichun Rd, Beijing 100086, Peoples R China
[3] Northwestern Polytech Univ, Sch Mat Sci & Engn, West Youyi Rd, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
Surface Ni-doping; Sputtering; Thin film; Secondary electron emission; Electron bombardment; CERMET FILMS; YIELD;
D O I
10.1016/j.matlet.2020.128452
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A surface Ni-doped MgO-Au thin film was prepared by reactive magnetron sputtering and showed a superior secondary electron emission (SEE) performance under continuous electron bombardment in comparison with an undoped one. The experimental results show that the surface Ni-doping improves the electrical conductivity of MgO-Au film due to a size reduction of MgO particles and a bandgap narrowing of the surface MgO layer. Additionally, a 3.4 at% Ni-doped MgO-Au film exhibits an average SEE decay rate per hour as low as 2.6% with a reduction of 31.6% under continuous electron bombardment compared with the undoped one, and especially its SEE coefficient turns to be higher after 4-hour electron bombardment. Thus, the surface Ni-doping is an effective strategy to suppress the surface charging effect and subsequent SEE decay of MgO-Au film owing to the improvement of electrical conductivity. (C) 2020 Elsevier B.V. All rights reserved.
引用
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页数:4
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