Controlled growth of vertical ZnO nanowires on copper substrate

被引：13

作者：

Tam-Triet Ngo-Duc ^{[1
,2
,3
]}

Gacusan, Jovi ^{[1
,2
,3
]}

Kobayashi, Nobuhiko P. ^{[3
,4
]}

Sanghadasa, Mohan ^{[5
]}

Meyyappan, M. ^{[1
]}

Oye, Michael M. ^{[1
,2
,3
,4
]}

机构：

[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

[2] NASA, Ames Res Ctr, ELORET Corp, Moffett Field, CA 94035 USA

[3] NASA, Ames Res Ctr, UCSC NASA ARC Adv Studies Labs, Moffett Field, CA 94035 USA

[4] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA

[5] USA, Weap Sci Directorate, Aviat & Missile RDEC, RDECOM, Redstone Arsenal, AL 35898 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 08期

关键词：

NANOSTRUCTURES;

D O I：

10.1063/1.4793758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an approach for diameter control of vertically aligned ZnO nanowires (NWs) grown directly on copper substrates. Vapor-solid growth was done at 550 degrees C with solid Zn precursor under Ar/O-2 flow, and the resulting nanowires with in situ-controllable diameters ranged between 50 to 500 nm. The nanowires were observed to elongate in tip growth and diameters were directly controlled by varying the oxygen concentration. Direct growth of vertical wires on metal substrates is expected to be useful to construct piezoelectric devices and applications involving sensors and detectors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793758]

引用

页数：4

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