Epitaxial Growth of ZnSe Films on CuGaSe2 Films

被引：0

作者：

Tanaka, Masahiro ^{[1
]}

Nabetani, Yoichi ^{[1
]}

Kato, Takamasa ^{[1
]}

Matsumoto, Takashi ^{[1
]}

机构：

[1] Yamaguchi Univ, Dept Elect Engn, Kofu, Yamanashi 4008511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2000年 / 39卷 / 01期

关键词：

epitaxial growth; CuGaSe2; ZnSe; iodide MBE; lattice coherency; inter diffusion;

D O I：

10.7567/JJAPS.39S1.218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe epitaxial layers are grown on CuGaSe2 layers on GaAs(100) substrates by MBE. The ZnSe/CuGaSe2/GaAs(100) structures are characterized by X-ray diffraction (XRD) and photoluminescence (PL) measurements and transmission electron microscopy (TEM). ZnSe layers are grown coherently on CuGaSe2 layers that were grown coherently on GaAs substrate. The properties of ZnSe layer are sensitive to the degree of lattice relaxation of underlying CuGaSe, epitaxial layer. Cu-acceptor bound exciton emission are clearly seen in PL spectra from ZnSe, though Cu-related deep level emissions dominate the spectra.

引用

页码：218 / 219

页数：2

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