Gas cluster ion beam technology for nano-fabrication

被引:1
作者
Toyoda, Noriaki [1 ]
Yamada, Isao [1 ]
机构
[1] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan
来源
SMART & ADAPTIVE OPTICS | 2013年 / 82卷
关键词
Gas cluster ion beam; nanofabrication; surface planarization; sidewall roughness; MOLECULAR-DYNAMICS; DAMAGE FORMATION; SIMULATION; MEDIA; FILMS;
D O I
10.4028/www.scientific.net/AST.82.1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.
引用
收藏
页码:1 / 8
页数:8
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