Ab initio study of H, B, C, N, O, and self-interstitial atoms in hcp-Zr

被引:14
|
作者
You, Daegun [1 ]
Ganorkar, Shraddha [1 ]
Joo, Minsoo [1 ]
Park, Donghyun [1 ]
Kim, Sooran [2 ]
Kang, Keonwook [3 ]
Lee, Dongwoo [1 ]
机构
[1] Sungkyunkwan Univ, Sch Mech Engn, Suwon, Gyeonggi Do, South Korea
[2] Kyungpook Natl Univ, Dept Phys Educ, Daegu, South Korea
[3] Yonsei Univ, Dept Mech Engn, Seoul, South Korea
基金
新加坡国家研究基金会;
关键词
Ab initio simulation; Formation energy; Interstitial atom; Zr; NANOCALORIMETRY EXPERIMENTS; STABILITY; CARBON; ELECTRONEGATIVITY; IMPURITIES; DIFFUSION; ALLOYS; ENERGY;
D O I
10.1016/j.jallcom.2019.02.144
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, we investigate the stabilities of H, B, C, N, O, and Zr atoms at various interstitial sites in hcp-Zr using a first-principles theoretical approach. The formation energy of each interstitial atom at each site in the hcp crystal was determined, and the difference in the energy at different sites were considered as a static energy barrier to predict energetically favored diffusion pathways. Linear and non-linear prediction models for the interstitial formation energy were developed using readily accessible chemical and structural input parameters. We show that a simple linear model predicts the formation energies of the interstitial atoms with an R-2 of 97%. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:631 / 637
页数:7
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