T- and Y-Branched Three-Terminal Junction Graphene Devices

被引：3

作者：

Pezoldt, Joerg ^{[1
]}

Goeckeritz, Robert ^{[1
,2
]}

Haehnlein, Bernd ^{[1
]}

Haendel, Benjamin ^{[1
]}

Schwierz, Frank ^{[3
]}

机构：

[1] Tech Univ Ilmenau, FG Nanotechnol, Inst Mikro & Nanotechnologien MacroNano, Postfach 100565, D-98684 Ilmenau, Germany

[2] Martin Luther Univ Halle Wittenberg, Inst Phys, FG Nanostrukturierte Mat, D-06120 Halle, Germany

[3] Tech Univ Ilmenau, Inst Mikro & Nanotechnol Macronano, FG Festkorperelektronik, D-98684 Ilmenau, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

three-terminal junction; graphene; heteroepitaxy; BALLISTIC JUNCTIONS;

D O I：

10.4028/www.scientific.net/MSF.717-720.683

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heteroepitaxial graphene on semiinsulating silicon carbide was used to fabricate nanoelectronic devices. T- and Y-branched graphene three-terminal junction devices were realized. Room temperature electrical measurements demonstrate pronounced nonlinear electrical properties of the devices. Voltage rectification at room temperature was observed. Increasing branch width reduces the curvature of the voltage rectification response curve of the three-terminal junctions.

引用

页码：683 / +

页数：2

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