Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches

被引：7

作者：

Liu Hongwei ^{[1
,2
]}

Cheng, Sun ^{[3
]}

Lu Junpeng ^{[1
]}

Zheng Minrui ^{[1
]}

Yong, Lim Kim ^{[1
]}

Mathews, Nripan ^{[3
]}

Mhaisalkar, Subodh G. ^{[3
]}

Hai, Tang Sing ^{[1
]}

Zhang Xinhai ^{[2
]}

Haur, Sow Chorng ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

RSC ADVANCES | 2012年 / 2卷 / 25期

关键词：

PERFORMANCE; SCATTERING;

D O I：

10.1039/c2ra20973j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work reports the characterization of antimony doping effects on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers.

引用

页码：9590 / 9595

页数：6

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