Frequency-dependent reluctance extraction

A new methodology is presented to capture high frequency effects of interconnect, namely skin and proximity by using the reluctance (inverse inductance) method. As demonstrated in numerous publications that the reluctance method exhibits excellent locality and suitability of sparsification. The reluctance method results in great benefit in terms of efficiency of extraction and simulation. Most of the previous studies described the reluctance extraction method without taking frequency dependent effects into consideration. In this paper, we first show the differences in frequency response between formula-based inductance extraction and frequency dependent inductance extraction to demonstrate the need to capture high frequency effect. Then a novel frequency dependent reluctance extraction method is proposed by rising a robust windowing policy, which is able to handle irregular geometries in VLSI applications. Experimental results demonstrate the superior runtime and accuracy over traditional partial inductance extraction.