The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

被引：2

作者：

Zhang, Guoqiang ^{[1
]}

Kochhar, Abhay ^{[2
]}

Yoshida, Keiji ^{[1
]}

Tanaka, Shuji ^{[2
]}

Hashimoto, Kenya ^{[3
]}

Esashi, Masayoshi ^{[2
]}

Pokharel, Ramesh K. ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Nishi Ku, Fukuoka 8190395, Japan

[2] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

[3] Chiba Univ, Grad Sch Engn, Inage Ku, Chiba 2638522, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 12期

关键词：

film bulk acoustic resonator; cross-coupled architecture; low frequency instability; phase noise; VCO;

D O I：

10.1587/elex.10.20130296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we propose the methods to mitigate low frequency instability in a film bulk acoustic resonator (FBAR) based cross-coupled voltage-controlled oscillator (FBAR-VCO). The first method employs a capacitor and while the other one employs a series inductor-capacitor. Using the post-layout simulation, a comparative study of the performances such as phase noise and figure of merit (FOM) of the designed FBAR-VCO is carried out. It is found that both the methods inhibit the low frequency instability successfully and the additional advantage of the second method is 2 dB improvement of FOM. Compared to other published FBAR-VCOs, this work has very low phase noise, below -150 dBc/Hz at 1MHz offset frequency, and much better FOM below -210 dB.

引用

页数：7

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