The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

被引:2
|
作者
Zhang, Guoqiang [1 ]
Kochhar, Abhay [2 ]
Yoshida, Keiji [1 ]
Tanaka, Shuji [2 ]
Hashimoto, Kenya [3 ]
Esashi, Masayoshi [2 ]
Pokharel, Ramesh K. [1 ]
机构
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Nishi Ku, Fukuoka 8190395, Japan
[2] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[3] Chiba Univ, Grad Sch Engn, Inage Ku, Chiba 2638522, Japan
来源
IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 12期
关键词
film bulk acoustic resonator; cross-coupled architecture; low frequency instability; phase noise; VCO;
D O I
10.1587/elex.10.20130296
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we propose the methods to mitigate low frequency instability in a film bulk acoustic resonator (FBAR) based cross-coupled voltage-controlled oscillator (FBAR-VCO). The first method employs a capacitor and while the other one employs a series inductor-capacitor. Using the post-layout simulation, a comparative study of the performances such as phase noise and figure of merit (FOM) of the designed FBAR-VCO is carried out. It is found that both the methods inhibit the low frequency instability successfully and the additional advantage of the second method is 2 dB improvement of FOM. Compared to other published FBAR-VCOs, this work has very low phase noise, below -150 dBc/Hz at 1MHz offset frequency, and much better FOM below -210 dB.
引用
收藏
页数:7
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