On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces

被引：8

作者：

Masri, P ^{[1
]}

Moreaud, N ^{[1
]}

Averous, M ^{[1
]}

Stauden, T ^{[1
]}

Wöhner, T ^{[1
]}

Pezoldt, J ^{[1
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, UMR 5650, F-34095 Montpellier, France

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

3C-SiC/Si structures with Ge incorporation are elaborated by solid source molecular beam epitaxy (SSMBE). A comparison of the flatness of the SiC-surface and the interface between SiC and Si by comparing the deposition with and without Ge is made. The results are analyzed within the framework of a theoretical approach based on the theory of elasticity.

引用

页码：213 / 218

页数：6

共 15 条

[1] THE GROWTH AND CHARACTERIZATION OF SI1-YCY ALLOYS ON SI(001) SUBSTRATE [J].

EBERL, K ;

IYER, SS ;

TSANG, JC ;

GOORSKY, MS ;

LEGOUES, FK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :934-936

[2] Improved epitaxy of cubic SiC thin films on Si(111) by solid-source MBE [J].

Fissel, A ;

Pfennighaus, K ;

Kaiser, U ;

Krausslich, J ;

Hobert, H ;

Schroter, B ;

Richter, W .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :255-258

[3] EPITAXY-INDUCED STRUCTURAL PHASE-TRANSFORMATIONS [J].

FROYEN, S ;

WEI, SH ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 38 (14) :10124-10127

[4] SI(111)(7X7)-GE AND SI(111)(5X5)-GE SURFACES STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].

HASEGAWA, S ;

IWASAKI, H ;

LI, ST ;

NAKAMURA, S .

PHYSICAL REVIEW B, 1985, 32 (10) :6949-6951

[5] Low-temperature interface modification by hydrocarbon radicals in heteroepitaxy of 3C-SiC on Si clean surface [J].

Hatayama, T ;

Tanaka, N ;

Fuyuki, T ;

Matsunami, H .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :160-164

[6] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE [J].

ICHIKAWA, T ;

INO, S .

SURFACE SCIENCE, 1984, 136 (2-3) :267-284

[7]

KITTEL C, 1968, INTRO SOLID STATE PH, P119

[8] SURFACE ELECTRONIC-STRUCTURE OF SI(111)7X7-GE AND SI(111)5X5-GE STUDIED WITH PHOTOEMISSION AND INVERSE PHOTOEMISSION [J].

MARTENSSON, P ;

NI, WX ;

HANSSON, GV ;

NICHOLLS, JM ;

REIHL, B .

PHYSICAL REVIEW B, 1987, 36 (11) :5974-5981

[9] Elasticity-based theory of misfit-induced structural defects at semiconductor interfaces [J].

Masri, P .

PHYSICAL REVIEW B, 1995, 52 (23) :16627-16633

[10]

MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P505

← 1 2 →