Simultaneous Enhancement of Brightness, Efficiency, and Switching in RGB Organic Light Emitting Transistors

被引：75

作者：

Ullah, Mujeeb ^{[1
,2
]}

Tandy, Kristen ^{[1
,2
]}

Yambem, Soniya D. ^{[1
,2
]}

Aljada, Muhsen ^{[1
,2
]}

Burn, Paul L. ^{[1
,2
]}

Meredith, Paul ^{[1
,2
]}

Namdas, Ebinazar B. ^{[1
,2
]}

机构：

[1] Univ Queensland, Ctr Organ Photon & Elect, Sch Math & Phys, Brisbane, Qld 4072, Australia

[2] Univ Queensland, Sch Chem & Mol Biosci, Brisbane, Qld 4072, Australia

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 43期

基金：

澳大利亚研究理事会;

关键词：

FIELD-EFFECT TRANSISTOR; GATE DIELECTRICS; RECOMBINATION ZONE; LOW-VOLTAGE; AMBIPOLAR; EMISSION;

D O I：

10.1002/adma.201302649

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An innovative design strategy for light emitting field effect transistors (LEFETs) to harvest higher luminance and switching is presented. The strategy uses a nonplanar electrode geometry in tri-layer LEFETs for simultaneous enhancement of the key parameters of quantum efficiency, brightness, switching, and mobility across the RGB color gamut.

引用

页码：6213 / 6218

页数：6

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