Probing scattering mechanisms with symmetric quantum cascade lasers

被引:36
作者
Deutsch, Christoph [1 ,2 ]
Detz, Hermann [2 ,3 ]
Zederbauer, Tobias [2 ,3 ]
Andrews, Aaron M. [2 ,3 ]
Klang, Pavel [2 ,3 ]
Kubis, Tillmann [4 ]
Klimeck, Gerhard [4 ]
Schuster, Manfred E. [5 ]
Schrenk, Werner [2 ,3 ]
Strasser, Gottfried [2 ,3 ]
Unterrainer, Karl [1 ,2 ]
机构
[1] Vienna Univ Technol, Photon Inst, A-1040 Vienna, Austria
[2] Vienna Univ Technol, Ctr Micro & Nanostruct, A-1040 Vienna, Austria
[3] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria
[4] Purdue Univ, Network Computat Nanotechnol, W Lafayette, IN 47907 USA
[5] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
基金
奥地利科学基金会;
关键词
INTERFACE ROUGHNESS;
D O I
10.1364/OE.21.007209
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A characteristic feature of quantum cascade lasers is their unipolar carrier transport. We exploit this feature and realize nominally symmetric active regions for terahertz quantum cascade lasers, which should yield equal performance with either bias polarity. However, symmetric devices exhibit a strongly bias polarity dependent performance due to growth direction asymmetries, making them an ideal tool to study the related scattering mechanisms. In the case of an InGaAs/GaAsSb heterostructure, the pronounced interface asymmetry leads to a significantly better performance with negative bias polarity and can even lead to unidirectionally working devices, although the nominal band structure is symmetric. The results are a direct experimental proof that interface roughness scattering has a major impact on transport/lasing performance. (C) 2013 Optical Society of America
引用
收藏
页码:7209 / 7215
页数:7
相关论文
共 23 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   Influence of the growth temperature on the performances of strain-balanced quantum cascade lasers [J].
Bismuto, A. ;
Terazzi, R. ;
Beck, M. ;
Faist, Jerome .
APPLIED PHYSICS LETTERS, 2011, 98 (09)
[3]   High-performance midinfrared quantum cascade lasers [J].
Capasso, Federico .
OPTICAL ENGINEERING, 2010, 49 (11)
[4]   Importance of interface roughness induced intersubband scattering in mid-infrared quantum cascade lasers [J].
Chiu, YenTing ;
Dikmelik, Yamac ;
Liu, Peter Q. ;
Aung, Nyan L. ;
Khurgin, Jacob B. ;
Gmachl, Claire F. .
APPLIED PHYSICS LETTERS, 2012, 101 (17)
[5]   Intersubband optoelectronics in the InGaAs/GaAsSb material system [J].
Detz, H. ;
Andrews, A. M. ;
Nobile, M. ;
Klang, P. ;
Mujagic, E. ;
Hesser, G. ;
Schrenk, W. ;
Schaeffler, F. ;
Strasser, G. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03)
[6]   High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K [J].
Deutsch, C. ;
Krall, M. ;
Brandstetter, M. ;
Detz, H. ;
Andrews, A. M. ;
Klang, P. ;
Schrenk, W. ;
Strasser, G. ;
Unterrainer, K. .
APPLIED PHYSICS LETTERS, 2012, 101 (21)
[7]   Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP [J].
Deutsch, Christoph ;
Benz, Alexander ;
Detz, Hermann ;
Klang, Pavel ;
Nobile, Michele ;
Andrews, Aaron Maxwell ;
Schrenk, Werner ;
Kubis, Tillmann ;
Vogl, Peter ;
Strasser, Gottfried ;
Unterrainer, Karl .
APPLIED PHYSICS LETTERS, 2010, 97 (26)
[8]   Thermoelectric Effect in Quantum Cascade Lasers [J].
Escarra, Matthew D. ;
Benz, Alexander ;
Bhatt, Anjali M. ;
Hoffman, Anthony J. ;
Wang, Xiaojun ;
Fan, Jen-Yu ;
Gmachl, Claire .
IEEE PHOTONICS JOURNAL, 2010, 2 (03) :500-509
[9]  
FAIST J, 2000, SEMICONDUCTOR SEMIME, V66
[10]   Terahertz quantum cascade lasers operating up to ∼ 200 K with optimized oscillator strength and improved injection tunneling [J].
Fathololoumi, S. ;
Dupont, E. ;
Chan, C. W. I. ;
Wasilewski, Z. R. ;
Laframboise, S. R. ;
Ban, D. ;
Matyas, A. ;
Jirauschek, C. ;
Hu, Q. ;
Liu, H. C. .
OPTICS EXPRESS, 2012, 20 (04) :3866-3876