Sb-mediated Ge quantum dots in Ti-oxide-Si diode: negative differential capacitance

被引：1

作者：

Rangel-Kuoppa, Victor-Tapio ^{[1
]}

Tonkikh, Alexander ^{[2
,3
]}

Werner, Peter ^{[2
]}

Jantsch, Wolfgang ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[3] Inst Phys Microstruct RAS, Nizhnii Novgorod, Russia

来源：

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2013年 / 14卷 / 03期

关键词：

Ge quantum dots; Ge quantum pyramids; CV; negative differential capacitance; metal oxide semiconductor; LEVEL TRANSIENT SPECTROSCOPY; SILICON; VOLTAGE; FILMS; DLTS;

D O I：

10.1088/1468-6996/14/3/035005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The negative differential capacitance (NDC) effect is observed on a titanium-oxide-silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain the NDC effect in terms of the emission of electrons from valence band states in the very narrow QD layer under reverse bias.

引用

页数：7

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