Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2: Quantum Oscillation Study

被引：154

作者：

Cai, P. L. ^{[1
,2
]}

Hu, J. ^{[3
]}

He, L. P. ^{[1
,2
]}

Pan, J. ^{[1
,2
]}

Hong, X. C. ^{[1
,2
]}

Zhang, Z. ^{[1
,2
]}

Zhang, J. ^{[1
,2
]}

Wei, J. ^{[3
]}

Mao, Z. Q. ^{[3
]}

Li, S. Y. ^{[1
,2
,4
]}

机构：

[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[2] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China

[3] Tulane Univ, Dept Phys & Engn Phys, New Orleans, LA 70118 USA

[4] Fudan Univ, Collaborat Innovat Ctr Adv Microstruct, Shanghai 200433, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2015年 / 115卷 / 05期

关键词：

GIANT MAGNETORESISTANCE; METAL;

D O I：

10.1103/PhysRevLett.115.057202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25 x 10(5)% under ambient pressure to 7.47 x 10(3)% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2.

引用

页数：5

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