Enhancement of Schottky barrier height on p-type GaN by (NH4)2Sx treatment

被引：14

作者：

Lin, YJ ^{[1
]}

You, CF

Lee, CS

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 05期

关键词：

D O I：

10.1063/1.2175446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Barrier height values of Ni contacts to (NH4)(2)S-x-treated p-type GaN (p-GaN) were obtained from current-voltage and x-ray photoelectron spectroscopy (XPS) measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission (TFE). Furthermore, the calculated barrier height value of Ni contacts to (NH4)(2)S-x-treated p-GaN using the TFE model is close to the Schottky limit, which is in good agreement with the observed result by XPS measurements and suggests that (NH4)(2)S-x surface treatment leads to the removal of native oxides and the reduction of the surface state related to oxygen-induced and nitrogen-vacancy defects.

引用

页数：4

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