Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

被引：36

作者：

Alonso-Alvarez, D. ^{[1
]}

Taboada, A. G. ^{[1
]}

Ripalda, J. M. ^{[1
]}

Alen, B. ^{[1
]}

Gonzalez, Y. ^{[1
]}

Gonzalez, L. ^{[1
]}

Garcia, J. M. ^{[1
]}

Briones, F. ^{[1
]}

Marti, A. ^{[2
]}

Luque, A. ^{[2
]}

Sanchez, A. M. ^{[3
,4
]}

Molina, S. I. ^{[3
,4
]}

机构：

[1] CSIC, CNM, Inst Microelect Madrid, PTM, Madrid 28760, Spain

[2] UPM, Inst Energia Solar IES, Madrid 28040, Spain

[3] QI Univ Cadiz, Cadiz 11510, Spain

[4] Dept Ciencia Mat & Ing Met, Cadiz 11510, Spain

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2978243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications. (C) 2008 American Institute of Physics.

引用

页数：3

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