The application of the electric field modulation and charge shielding effects to the high-voltage Si LDMOS

被引：8
作者：
Duan Baoxing [1 ]
Yang Yintang [1 ]
机构：
[1] Xidian Univ, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
来源：
IETE TECHNICAL REVIEW | 2012年 / 29卷 / 04期
基金：
美国国家科学基金会;
关键词：
Breakdown voltage; Electric field modulation; LDMOS; Shielding effect; Specific on-resistance;
D O I：
10.4103/0256-4602.101307
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this technical review, for the silicon Lateral Double-diffused MOSFET (LDMOS), the new technologies have been developed on the basis of several new lateral high-voltage devices designed by the authors. The new effects of the electric field modulation and charge shielding to the local electric fields have introduced to the silicon LDMOS. These new structures have improved the trade-off characteristic between the breakdown voltage and the on-resistance (R-on). This review is the second part for the development summarization of the power semiconductor -devices.
引用
收藏
页码：276 / 281
页数：6
相关论文
共 20 条
[1]   SELF-ALIGNED UMOSFETS WITH A SPECIFIC ON-RESISTANCE OF 1 M-OMEGA. CM2 [J].
CHANG, HR ;
BLACK, RD ;
TEMPLE, VAK ;
TANTRAPORN, W ;
BALIGA, BJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2329-2334
[2]   ON THE SURFACE ELECTRIC-FIELD OF JUNCTION DIODES WITH A TAPERED WINDOW [J].
CHOI, YI ;
KWAN, W .
SOLID-STATE ELECTRONICS, 1987, 30 (03) :353-354
[3]  
Duan B.X., 2007, CHINESE J SEMICONDUC, V28, P26
[4]   A Development Summarization of the Power Semiconductor Devices [J].
Duan, Baoxing ;
Yang, Yintang .
IETE TECHNICAL REVIEW, 2011, 28 (06) :503-510
[5]   High voltage REBULF LDMOS with N+ buried layer [J].
Duan, Baoxing ;
Yang, Yintang ;
Zhang, Bo .
SOLID-STATE ELECTRONICS, 2010, 54 (07) :685-688
[6]   Folded-Accumulation LDMOST: New Power MOS Transistor With Very Low Specific On-Resistance [J].
Duan, Baoxing ;
Yang, Yintang ;
Zhang, Bo ;
Hong, Xufeng .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) :1329-1331
[7]   New Superjunction LDMOS With N-Type Charges' Compensation Layer [J].
Duan, Baoxing ;
Yang, Yintang ;
Zhang, Bo .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (03) :305-307
[8]  
Duan Baoxing, 2005, Chinese Journal of Semiconductors, V26, P1396
[9]   New thin-film power MOSFETs with a buried oxide double step structure [J].
Duan, BX ;
Zhang, B ;
Li, ZJ .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :377-379
[10]   A new partial SOI power device structure with P-type buried layer [J].
Duan, BX ;
Zhang, B ;
Li, ZJ .
SOLID-STATE ELECTRONICS, 2005, 49 (12) :1965-1968
12