Optical spectra and recombination in Si-Ge heterostructures

被引：3

作者：

Corbin, E ^{[1
]}

Williams, C ^{[1
]}

Hagon, JP ^{[1
]}

Jaros, M ^{[1
]}

Presting, H ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR,D-7900 ULM,GERMANY

来源：

THIN SOLID FILMS | 1997年 / 294卷 / 1-2期

关键词：

optical spectroscopy; silicon; germanium; heterostructures;

D O I：

10.1016/S0040-6090(96)09242-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied optical spectra in p-type Si/SiGe heterostructures designed for applications in the range of 1-20 mu m wavelengths. Our results have been obtained in full-scale microscopic calculations and we present optimized device structures for thermal imaging devices. We also studied in detail the effects of substrate and barrier doping on the Fermi level and the resultant thermal offsets, an important parameter for determining the magnitude of the dark current in any device. Auger rates are presented for band-to-band and intra-valence band processes and compared with data for bulk materials.

引用

页码：186 / 189

页数：4

共 50 条

[21] Ge-Si and Si-Ge core-shell nanocrystals: Theoretical study
Javan, Masoud Bezi
THIN SOLID FILMS, 2015, 589 : 120 - 124
[22] Silicon solar cells with Si-Ge microheterojunctions
B. A. Abdurakhmanov
Kh. M. Iliev
S. A. Tachilin
A. R. Toshev
Russian Microelectronics, 2012, 41 (3) : 169 - 171
[23] Surface tension and density of Si-Ge melts
Ricci, Enrica
Amore, Stefano
Giuranno, Donatella
Novakovic, Rada
Tuissi, Ausonio
Sobczak, Natalia
Nowak, Rafal
Korpala, Bartlomiej
Bruzda, Grzegorz
JOURNAL OF CHEMICAL PHYSICS, 2014, 140 (21)
[24] Composition and microhardness of Si-Ge solid solution precipitates in Al-Si-Ge alloys solidified during centrifugation
Gurin, V. N.
Nikanorov, S. P.
Derkachenko, L. I.
Volkov, M. P.
Popova, T. V.
Wilcox, W. R.
Regel, L. L.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2008, 491 (1-2): : 343 - 348
[25] Raman study of Si-Ge intermixing in Ge quantum rings and dots
Mashanov, VI
Cheng, HH
Chia, CT
Chang, YH
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 28 (04) : 531 - 536
[26] Effect of Ge/Si Heterostructures on Carrier Extraction in Si Solar Cells with Ge Quantum Dots
Tayagaki, Takeshi
Hoshi, Yusuke
Ooi, Kazufumi
Kiguchi, Takanori
Usami, Noritaka
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 330 - 332
[27] Effect of Ge on dislocation nucleation from surface imperfections in Si-Ge
Li, Z.
Picu, R. C.
Muralidhar, R.
Oldiges, P.
JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)
[28] High-speed Si-Ge avalanche photodiodes
Wang, Binhao
Mu, Jifang
PHOTONIX, 2022, 3 (01)
[29] Mid-infrared nonlinear optical response of Si-Ge waveguides with ultra-short optical pulses
Carletti, L.
Sinobad, M.
Ma, P.
Yu, Y.
Allioux, D.
Orobtchouk, R.
Brun, M.
Ortiz, S.
Labeye, P.
Hartmann, J. M.
Nicoletti, S.
Madden, S.
Luther-Davies, B.
Moss, D. J.
Monat, C.
Grillet, C.
OPTICS EXPRESS, 2015, 23 (25): : 32202 - 32214
[30] Prediction of novel phase of silicon and Si-Ge alloys
Fan, Qingyang
Chai, Changchun
Wei, Qun
Yang, Yintang
Yang, Qi
Chen, Pengyuan
Xing, Mengjiang
Zhang, Junqin
Yao, Ronghui
JOURNAL OF SOLID STATE CHEMISTRY, 2016, 233 : 471 - 483

← 1 2 3 4 5 →