Electrical and optical properties of PbTe p-n junction infrared sensors -: art. no. 024904

被引：37

作者：

Barros, AS ^{[1
]}

Abramof, E ^{[1
]}

Rappl, PHO ^{[1
]}

机构：

[1] Inst Nacl Pesquisas Espaciais, Lab Assoc Sensores & Mat, BR-12245970 Sao Jose Dos Campos, SP, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 02期

关键词：

D O I：

10.1063/1.2161802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lead telluride mesa diodes were fabricated from a series of p-n junctions grown on (111) BaF2 substrates, in which the hole concentration p was kept constant at 10(17) cm(-3) and the electron concentration n varied between 10(17) and 10(19) cm(-3). Capacitance-voltage analysis showed that for n > 10(18) cm(-3) the PbTe p-n junction is one sided and abrupt. The parameters (incremental resistance, series and parallel resistances, and ideality factor) obtained from the current-voltage (I-V) characteristics and the detectivity D* exhibited a large fluctuation among the photodiodes. In spite of these fluctuations, it was possible to correlate the noise and D* values to the parameters obtained from the I-V analysis. These results allow predicting the PbTe detector's figures of merit from the data obtained from the I-V curves. The best PbTe photodiodes fabricated here showed D* values close to 10(11) cm Hz(1/2) W-1, comparable to InSb and HgCdTe commercial detectors and to PbTe sensors fabricated on Si substrates. (c) 2006 American Institute of Physics.

引用

页数：6

共 11 条

[1]

ANJOS AMP, 2004, BRAZ J PHYS, V34, P653

[2] GROWTH OF NARROW-GAP EPILAYERS AND P-N-JUNCTIONS ON SILICON FOR INFRARED DETECTORS ARRAYS [J].

BOSCHETTI, C ;

RAPPL, PHO ;

UETA, AY ;

BANDEIRA, IN .

INFRARED PHYSICS, 1993, 34 (03) :281-287

[3] Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates [J].

John, J ;

Zogg, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3364-3367

[4] Schottky-barrier fluctuations in Pb1-xSnxSe infrared sensors [J].

Paglino, C ;

Fach, A ;

John, J ;

Muller, P ;

Zogg, H ;

Pescia, D .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) :7138-7143

[5] Infrared detectors: an overview [J].

Rogalski, A .

INFRARED PHYSICS & TECHNOLOGY, 2002, 43 (3-5) :187-210

[6] EXPERIMENTAL INVESTIGATION OF THE DOUBLE EXPONENTIAL MODEL OF A SOLAR-CELL UNDER ILLUMINATED CONDITIONS - CONSIDERING THE INSTRUMENTAL UNCERTAINTIES IN THE CURRENT, VOLTAGE AND TEMPERATURE VALUES [J].

VEISSID, N ;

BONNET, D ;

RICHTER, H .

SOLID-STATE ELECTRONICS, 1995, 38 (11) :1937-1943

[7] Heteroepitaxial PbTe-on-Si pn-junction IR-sensors: correlations between material and device properties [J].

Zimin, D ;

Alchalabi, K ;

Zogg, H .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :1220-1223

[8] Two-dimensional monolithic Lead chalcogenide infrared sensor Arrays on silicon read-out chips and noise mechanisms [J].

Zogg, H ;

Alchalabi, K ;

Zimin, D ;

Kellermann, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) :209-214

[9] Lead chalcogenide on silicon infrared sensors: focal plane array with 96 x 128 pixels on active Si-chip [J].

Zogg, H ;

Alchalabi, K ;

Zimin, D ;

Kellermann, K .

INFRARED PHYSICS & TECHNOLOGY, 2002, 43 (3-5) :251-255

[10] PHOTOVOLTAIC LEAD-CHALCOGENIDE ON SILICON INFRARED-SENSOR ARRAYS [J].

ZOGG, H ;

FACH, A ;

MAISSEN, C ;

MASEK, J ;

BLUNIER, S .

OPTICAL ENGINEERING, 1994, 33 (05) :1440-1449

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